Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3143616
Title: Thermoelectric performance of silicon nanowires
Authors: Zhang, G.
Zhang, Q.
Bui, C.-T.
Lo, G.-Q.
Li, B. 
Issue Date: 2009
Citation: Zhang, G., Zhang, Q., Bui, C.-T., Lo, G.-Q., Li, B. (2009). Thermoelectric performance of silicon nanowires. Applied Physics Letters 94 (21) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3143616
Abstract: With finite element simulation and analytic modeling, the thermoelectric performance of silicon nanowires (SiNWs) is studied. Large cooling temperature is observed which increases remarkably as thermal conductivity of SiNW decreases. Moreover, high cooling power density of 6.6× 103 W/ cm2 is achieved which is about 600 times larger than that of commercial thermoelectric modules. Moreover, SiNW cooler can reach the coefficient as high as 61%. All these features make SiNW a very promising material in application of on-chip temperature controlling and heat dissipating for hot spots inside integrated circuits. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/98387
ISSN: 00036951
DOI: 10.1063/1.3143616
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