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|Title:||Thermal rectification at silicon-amorphous polyethylene interface|
|Citation:||Hu, M., Keblinski, P., Li, B. (2008). Thermal rectification at silicon-amorphous polyethylene interface. Applied Physics Letters 92 (21) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2937834|
|Abstract:||Using nonequilibrium molecular dynamics simulations, we study the thermal diode effect in a system composed of inorganic crystal and amorphous polymer by imposing a series of positive and negative heat currents. We estimate that in the limit of large heat currents, the silicon-amorphous polyethylene interfacial thermal conductance is about 19.6 and 13.5 MW m2 K at room temperature for heat flowing from polymer to silicon and from silicon to polymer, respectively, which results in thermal rectification of up to 45%. Vibrational analysis indicates that the origin of thermal rectification is in the strong temperature dependence of the frequency spectra of the polymer. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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