Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2937834
Title: Thermal rectification at silicon-amorphous polyethylene interface
Authors: Hu, M.
Keblinski, P.
Li, B. 
Issue Date: 2008
Citation: Hu, M., Keblinski, P., Li, B. (2008). Thermal rectification at silicon-amorphous polyethylene interface. Applied Physics Letters 92 (21) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2937834
Abstract: Using nonequilibrium molecular dynamics simulations, we study the thermal diode effect in a system composed of inorganic crystal and amorphous polymer by imposing a series of positive and negative heat currents. We estimate that in the limit of large heat currents, the silicon-amorphous polyethylene interfacial thermal conductance is about 19.6 and 13.5 MW m2 K at room temperature for heat flowing from polymer to silicon and from silicon to polymer, respectively, which results in thermal rectification of up to 45%. Vibrational analysis indicates that the origin of thermal rectification is in the strong temperature dependence of the frequency spectra of the polymer. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/98363
ISSN: 00036951
DOI: 10.1063/1.2937834
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