Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/98354
Title: Thermal cure study of a low-k methyl silsesquioxane for intermetal dielectric application by FT-IR spectroscopy
Authors: Wang, C.Y.
Shen, Z.X. 
Zheng, J.Z.
Issue Date: Feb-2000
Source: Wang, C.Y.,Shen, Z.X.,Zheng, J.Z. (2000-02). Thermal cure study of a low-k methyl silsesquioxane for intermetal dielectric application by FT-IR spectroscopy. Applied Spectroscopy 54 (2) : 209-213. ScholarBank@NUS Repository.
Abstract: In this paper, Fourier transform infrared (FT-IR) spectroscopy is used to study the thermal properties of methyl silsesquioxane (MSQ), an important low-dielectric-constant organic spin-on glass for semiconductor device fabrication. The compositional and structural changes of MSQ with temperature are investigated in detail. The cross-linking process, where the three-dimensional networked structure is formed, is found to start at room temperature, and is almost complete at the typical baking temperature of 250 °C. Further cross-linking occurs during the curing process at 425 °C, and small short-chain clusters can also be driven away at this temperature by sublimation. In this study, we have assigned all the MSQ IR peaks and we have used the long-chain O-Si-O IR peak to calculate the `degree of cross-linking' quantitatively.
Source Title: Applied Spectroscopy
URI: http://scholarbank.nus.edu.sg/handle/10635/98354
ISSN: 00037028
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