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|Title:||Thermal cure study of a low-k methyl silsesquioxane for intermetal dielectric application by FT-IR spectroscopy|
|Citation:||Wang, C.Y.,Shen, Z.X.,Zheng, J.Z. (2000-02). Thermal cure study of a low-k methyl silsesquioxane for intermetal dielectric application by FT-IR spectroscopy. Applied Spectroscopy 54 (2) : 209-213. ScholarBank@NUS Repository.|
|Abstract:||In this paper, Fourier transform infrared (FT-IR) spectroscopy is used to study the thermal properties of methyl silsesquioxane (MSQ), an important low-dielectric-constant organic spin-on glass for semiconductor device fabrication. The compositional and structural changes of MSQ with temperature are investigated in detail. The cross-linking process, where the three-dimensional networked structure is formed, is found to start at room temperature, and is almost complete at the typical baking temperature of 250 °C. Further cross-linking occurs during the curing process at 425 °C, and small short-chain clusters can also be driven away at this temperature by sublimation. In this study, we have assigned all the MSQ IR peaks and we have used the long-chain O-Si-O IR peak to calculate the `degree of cross-linking' quantitatively.|
|Source Title:||Applied Spectroscopy|
|Appears in Collections:||Staff Publications|
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