Please use this identifier to cite or link to this item:
|Title:||The nature of the hydrogen-phosphorus system in crystalline Si|
|Citation:||Khoo, G.S., Ong, C.K. (1991). The nature of the hydrogen-phosphorus system in crystalline Si. Journal of Physics: Condensed Matter 3 (33) : 6321-6327. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/3/33/011|
|Abstract:||The authors have used a semi-empirical self-consistent method to investigate the motion of the H atom in the Si lattice in the presence of a P impurity. Their findings indicate that the P atom localizes the H atom, impeding its diffusion through the lattice. However, their most stable configuration has the H atom sandwiched in the interstitial space between the P and Si atoms compared with the model suggested by Johnson, Herring and Chadi in 1986 with the H atom at the AB site of a Si nearest neighbour of a substitutional P. Their results also agree qualitatively with the general observations regarding the H-P system from experimental data.|
|Source Title:||Journal of Physics: Condensed Matter|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 17, 2019
WEB OF SCIENCETM
checked on Jan 9, 2019
checked on Dec 21, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.