Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/3/33/011
Title: The nature of the hydrogen-phosphorus system in crystalline Si
Authors: Khoo, G.S.
Ong, C.K. 
Issue Date: 1991
Source: Khoo, G.S., Ong, C.K. (1991). The nature of the hydrogen-phosphorus system in crystalline Si. Journal of Physics: Condensed Matter 3 (33) : 6321-6327. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/3/33/011
Abstract: The authors have used a semi-empirical self-consistent method to investigate the motion of the H atom in the Si lattice in the presence of a P impurity. Their findings indicate that the P atom localizes the H atom, impeding its diffusion through the lattice. However, their most stable configuration has the H atom sandwiched in the interstitial space between the P and Si atoms compared with the model suggested by Johnson, Herring and Chadi in 1986 with the H atom at the AB site of a Si nearest neighbour of a substitutional P. Their results also agree qualitatively with the general observations regarding the H-P system from experimental data.
Source Title: Journal of Physics: Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/98300
ISSN: 09538984
DOI: 10.1088/0953-8984/3/33/011
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