Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/3/6/005
Title: The nature of the hydrogen-boron complex of crystalline Si
Authors: Ong, C.K. 
Khoo, G.S.
Issue Date: 1991
Citation: Ong, C.K., Khoo, G.S. (1991). The nature of the hydrogen-boron complex of crystalline Si. Journal of Physics: Condensed Matter 3 (6) : 675-680. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/3/6/005
Abstract: The authors have used the complete neglect of differential overlap (CNDO) method to investigate the motion of the H atom within the Si lattice in the presence of a B impurity. Their results seem to indicate that the H atom moves in a low-energy channel in the vicinity of the B atom located at a substitutional site. However, the most stable configuration of this H-B system results when the H atom lodges itself near the bond-centred site of a Si-B bond (BM site). The B atom is displaced towards the plane of the other three neighbouring Si atoms and this displacement is calculated to be 0.28 AA, which agrees very well with the experimental value of 0.28+or-0.03 AA.
Source Title: Journal of Physics: Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/98299
ISSN: 09538984
DOI: 10.1088/0953-8984/3/6/005
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

12
checked on Oct 12, 2018

WEB OF SCIENCETM
Citations

12
checked on Sep 26, 2018

Page view(s)

22
checked on Sep 21, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.