Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/5/9/003
Title: The multi-hole localization mechanism for particle emission from semiconductor surfaces
Authors: Khoo, G.S.
Ong, C.K. 
Itoh, N.
Issue Date: 1993
Source: Khoo, G.S., Ong, C.K., Itoh, N. (1993). The multi-hole localization mechanism for particle emission from semiconductor surfaces. Journal of Physics: Condensed Matter 5 (9) : 1187-1194. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/5/9/003
Abstract: The authors have investigated the consequences of multi-hole localization at defect sites on the GaP(110) surface: the relaxation of the lattice and the emission of atoms due to bond breaking. It is shown that the combination of localization of two-hole states on a defect with cascade excitation results in emission of an atom from the defect. The results support the mechanism suggested by Hattori et al. (1990) of defect-initiated emission of Ga atoms under laser irradiation, of which the yield is a superlinear function of laser fluence.
Source Title: Journal of Physics: Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/98296
ISSN: 09538984
DOI: 10.1088/0953-8984/5/9/003
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