Please use this identifier to cite or link to this item:
|Title:||The multi-hole localization mechanism for particle emission from semiconductor surfaces|
|Citation:||Khoo, G.S., Ong, C.K., Itoh, N. (1993). The multi-hole localization mechanism for particle emission from semiconductor surfaces. Journal of Physics: Condensed Matter 5 (9) : 1187-1194. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/5/9/003|
|Abstract:||The authors have investigated the consequences of multi-hole localization at defect sites on the GaP(110) surface: the relaxation of the lattice and the emission of atoms due to bond breaking. It is shown that the combination of localization of two-hole states on a defect with cascade excitation results in emission of an atom from the defect. The results support the mechanism suggested by Hattori et al. (1990) of defect-initiated emission of Ga atoms under laser irradiation, of which the yield is a superlinear function of laser fluence.|
|Source Title:||Journal of Physics: Condensed Matter|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 22, 2018
WEB OF SCIENCETM
checked on Sep 12, 2018
checked on Sep 21, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.