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https://doi.org/10.1088/0953-8984/5/9/003
Title: | The multi-hole localization mechanism for particle emission from semiconductor surfaces | Authors: | Khoo, G.S. Ong, C.K. Itoh, N. |
Issue Date: | 1993 | Citation: | Khoo, G.S., Ong, C.K., Itoh, N. (1993). The multi-hole localization mechanism for particle emission from semiconductor surfaces. Journal of Physics: Condensed Matter 5 (9) : 1187-1194. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/5/9/003 | Abstract: | The authors have investigated the consequences of multi-hole localization at defect sites on the GaP(110) surface: the relaxation of the lattice and the emission of atoms due to bond breaking. It is shown that the combination of localization of two-hole states on a defect with cascade excitation results in emission of an atom from the defect. The results support the mechanism suggested by Hattori et al. (1990) of defect-initiated emission of Ga atoms under laser irradiation, of which the yield is a superlinear function of laser fluence. | Source Title: | Journal of Physics: Condensed Matter | URI: | http://scholarbank.nus.edu.sg/handle/10635/98296 | ISSN: | 09538984 | DOI: | 10.1088/0953-8984/5/9/003 |
Appears in Collections: | Staff Publications |
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