Please use this identifier to cite or link to this item: https://doi.org/10.1021/ja071658g
Title: Surface transfer p-type doping of epitaxial graphene
Authors: Chen, W. 
Chen, S. 
Dong, C.Q. 
Xing, Y.G. 
Wee, A.T.S. 
Issue Date: 29-Aug-2007
Citation: Chen, W., Chen, S., Dong, C.Q., Xing, Y.G., Wee, A.T.S. (2007-08-29). Surface transfer p-type doping of epitaxial graphene. Journal of the American Chemical Society 129 (34) : 10418-10422. ScholarBank@NUS Repository. https://doi.org/10.1021/ja071658g
Abstract: Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications. © 2007 American Chemical Society.
Source Title: Journal of the American Chemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/98144
ISSN: 00027863
DOI: 10.1021/ja071658g
Appears in Collections:Staff Publications

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