Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2428413
Title: Structural properties of ZnO grown on GaNSapphire templates
Authors: Zhou, H.L.
Chua, S.J.
Pan, H. 
Lin, J.Y. 
Feng, Y.P. 
Wang, L.S.
Liu, W.
Zang, K.Y.
Tripathy, S.
Issue Date: 2007
Citation: Zhou, H.L., Chua, S.J., Pan, H., Lin, J.Y., Feng, Y.P., Wang, L.S., Liu, W., Zang, K.Y., Tripathy, S. (2007). Structural properties of ZnO grown on GaNSapphire templates. Electrochemical and Solid-State Letters 10 (3) : H98-H100. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2428413
Abstract: ZnO nanorods were synthesized on GaN /sapphire substrates using a modified thermal-evaporation process. The as-synthesized ZnO nanorods and thin films were characterized using scanning electron microscopy, micro-Raman, and X-ray diffraction techniques. The morphology of the ZnO changes from nanorods to continuous thin films when the growth temperature increases to 800°C. Further increase in the growth temperature leads to a lower growth rate of ZnO along the (0001) direction. Micro-photoluminescence measurements show ultraviolet band-edge emission peaks around 378 nm from both nanorods and thin films. Realization of such ZnO structures may be useful for the fabrication of hybrid ZnOGaN optoelectronic devices. © 2007 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/98062
ISSN: 10990062
DOI: 10.1149/1.2428413
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