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|Title:||Structural properties of ZnO grown on GaNSapphire templates|
|Citation:||Zhou, H.L., Chua, S.J., Pan, H., Lin, J.Y., Feng, Y.P., Wang, L.S., Liu, W., Zang, K.Y., Tripathy, S. (2007). Structural properties of ZnO grown on GaNSapphire templates. Electrochemical and Solid-State Letters 10 (3) : H98-H100. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2428413|
|Abstract:||ZnO nanorods were synthesized on GaN /sapphire substrates using a modified thermal-evaporation process. The as-synthesized ZnO nanorods and thin films were characterized using scanning electron microscopy, micro-Raman, and X-ray diffraction techniques. The morphology of the ZnO changes from nanorods to continuous thin films when the growth temperature increases to 800°C. Further increase in the growth temperature leads to a lower growth rate of ZnO along the (0001) direction. Micro-photoluminescence measurements show ultraviolet band-edge emission peaks around 378 nm from both nanorods and thin films. Realization of such ZnO structures may be useful for the fabrication of hybrid ZnOGaN optoelectronic devices. © 2007 The Electrochemical Society.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
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