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https://doi.org/10.1149/1.2428413
Title: | Structural properties of ZnO grown on GaNSapphire templates | Authors: | Zhou, H.L. Chua, S.J. Pan, H. Lin, J.Y. Feng, Y.P. Wang, L.S. Liu, W. Zang, K.Y. Tripathy, S. |
Issue Date: | 2007 | Citation: | Zhou, H.L., Chua, S.J., Pan, H., Lin, J.Y., Feng, Y.P., Wang, L.S., Liu, W., Zang, K.Y., Tripathy, S. (2007). Structural properties of ZnO grown on GaNSapphire templates. Electrochemical and Solid-State Letters 10 (3) : H98-H100. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2428413 | Abstract: | ZnO nanorods were synthesized on GaN /sapphire substrates using a modified thermal-evaporation process. The as-synthesized ZnO nanorods and thin films were characterized using scanning electron microscopy, micro-Raman, and X-ray diffraction techniques. The morphology of the ZnO changes from nanorods to continuous thin films when the growth temperature increases to 800°C. Further increase in the growth temperature leads to a lower growth rate of ZnO along the (0001) direction. Micro-photoluminescence measurements show ultraviolet band-edge emission peaks around 378 nm from both nanorods and thin films. Realization of such ZnO structures may be useful for the fabrication of hybrid ZnOGaN optoelectronic devices. © 2007 The Electrochemical Society. | Source Title: | Electrochemical and Solid-State Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/98062 | ISSN: | 10990062 | DOI: | 10.1149/1.2428413 |
Appears in Collections: | Staff Publications |
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