Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/12/31/303
Title: Stress effect on Raman spectra of Ce-doped BaTiO3 films
Authors: Chen, M.S.
Shen, Z.X. 
Tang, S.H. 
Shi, W.S.
Cui, D.F.
Chen, Z.H.
Issue Date: 7-Aug-2000
Citation: Chen, M.S., Shen, Z.X., Tang, S.H., Shi, W.S., Cui, D.F., Chen, Z.H. (2000-08-07). Stress effect on Raman spectra of Ce-doped BaTiO3 films. Journal of Physics Condensed Matter 12 (31) : 7013-7023. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/12/31/303
Abstract: Ce-doped BaTiO3 (BTO:Ce) thin films prepared on MgO (100) substrates by pulsed laser deposition (PLD) at oxygen pressure of 1.2×10-3 and 17 Pa have been studied by micro-Raman spectroscopy, x-ray diffraction (XRD) and atomic force microscopy (AFM). The film deposited at lower oxygen pressure has a larger lattice parameter in the direction normal to the substrate surface, and the film has smaller grains and a smoother surface. The polarized Raman peaks of both as-deposited films show blue shifts and linewidth broadening in comparison to those of the BaTiO3 single crystal. The blue shifts are attributed to tensile stresses in the films. Our results indicate that the grain size increases and the tensile stress relaxes with annealing. We have shown that quantum confinement and oxygen vacancies are not the dominant factors for the observed Raman spectral changes.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/98036
ISSN: 09538984
DOI: 10.1088/0953-8984/12/31/303
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