Spatial characterization of doped SiC wafers by Raman spectroscopy
Burton, J.C. Sun, L. Pophristic, M. Lukacs, S.J. Long, F.H. Feng, Z.C. Ferguson, I.T.
Burton, J.C.
Sun, L.
Pophristic, M.
Lukacs, S.J.
Long, F.H.
Ferguson, I.T.
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Abstract
Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The wafers studied were semi-insulating and n-type (nitrogen) doped with concentrations between 2.1×1018 and 12×1019 Cm-3. Significant coupling of the A1 longitudinal optical (LO) phonon to the plasmon mode was observed. The position of this peak shows a direct correlation with the carrier concentration. Examination of the Raman spectra from different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. These data are compared with a resistivity map of the wafer. These results suggest that Raman spectroscopy of the LO phonon-plasmon mode can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation. © 1998 American Institute of Physics.
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Journal of Applied Physics
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1998-12-01
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Article