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Title: Spatial characterization of doped SiC wafers by Raman spectroscopy
Authors: Burton, J.C.
Sun, L.
Pophristic, M.
Lukacs, S.J.
Long, F.H.
Feng, Z.C. 
Ferguson, I.T.
Issue Date: 1-Dec-1998
Citation: Burton, J.C.,Sun, L.,Pophristic, M.,Lukacs, S.J.,Long, F.H.,Feng, Z.C.,Ferguson, I.T. (1998-12-01). Spatial characterization of doped SiC wafers by Raman spectroscopy. Journal of Applied Physics 84 (11) : 6268-6273. ScholarBank@NUS Repository.
Abstract: Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The wafers studied were semi-insulating and n-type (nitrogen) doped with concentrations between 2.1×1018 and 12×1019 Cm-3. Significant coupling of the A1 longitudinal optical (LO) phonon to the plasmon mode was observed. The position of this peak shows a direct correlation with the carrier concentration. Examination of the Raman spectra from different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. These data are compared with a resistivity map of the wafer. These results suggest that Raman spectroscopy of the LO phonon-plasmon mode can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation. © 1998 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
Appears in Collections:Staff Publications

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