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|Title:||Spatial characterization of doped SiC wafers by Raman spectroscopy||Authors:||Burton, J.C.
|Issue Date:||1-Dec-1998||Citation:||Burton, J.C.,Sun, L.,Pophristic, M.,Lukacs, S.J.,Long, F.H.,Feng, Z.C.,Ferguson, I.T. (1998-12-01). Spatial characterization of doped SiC wafers by Raman spectroscopy. Journal of Applied Physics 84 (11) : 6268-6273. ScholarBank@NUS Repository.||Abstract:||Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The wafers studied were semi-insulating and n-type (nitrogen) doped with concentrations between 2.1×1018 and 12×1019 Cm-3. Significant coupling of the A1 longitudinal optical (LO) phonon to the plasmon mode was observed. The position of this peak shows a direct correlation with the carrier concentration. Examination of the Raman spectra from different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. These data are compared with a resistivity map of the wafer. These results suggest that Raman spectroscopy of the LO phonon-plasmon mode can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation. © 1998 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/97973||ISSN:||00218979|
|Appears in Collections:||Staff Publications|
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