Single photon emission from SiV centres in diamond produced by ion implantation
Wang, C. Kurtsiefer, C. Weinfurter, H. Burchard, B.
Wang, C.
Weinfurter, H.
Burchard, B.
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Abstract
We report the observation of single photon emission from single SiV (silicon-vacancy) centres in diamond produced by ion implantation. The high photostability and the narrow emission bandwidth of about 5 nm at room temperature make SiV centres interesting as a single photon source in practical quantum cryptography. We discuss problems that arise from the nonradiaditve transitions which lower the brightness of the source. © 2006 IOP Publishing Ltd.
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Source Title
Journal of Physics B: Atomic, Molecular and Optical Physics
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Date
2006-01-14
DOI
10.1088/0953-4075/39/1/005
Type
Article