Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-4075/39/1/005
Title: Single photon emission from SiV centres in diamond produced by ion implantation
Authors: Wang, C.
Kurtsiefer, C. 
Weinfurter, H.
Burchard, B.
Issue Date: 14-Jan-2006
Citation: Wang, C., Kurtsiefer, C., Weinfurter, H., Burchard, B. (2006-01-14). Single photon emission from SiV centres in diamond produced by ion implantation. Journal of Physics B: Atomic, Molecular and Optical Physics 39 (1) : 37-41. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-4075/39/1/005
Abstract: We report the observation of single photon emission from single SiV (silicon-vacancy) centres in diamond produced by ion implantation. The high photostability and the narrow emission bandwidth of about 5 nm at room temperature make SiV centres interesting as a single photon source in practical quantum cryptography. We discuss problems that arise from the nonradiaditve transitions which lower the brightness of the source. © 2006 IOP Publishing Ltd.
Source Title: Journal of Physics B: Atomic, Molecular and Optical Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/97936
ISSN: 09534075
DOI: 10.1088/0953-4075/39/1/005
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