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https://doi.org/10.1088/0953-4075/39/1/005
| Title: | Single photon emission from SiV centres in diamond produced by ion implantation | Authors: | Wang, C. Kurtsiefer, C. Weinfurter, H. Burchard, B. |
Issue Date: | 14-Jan-2006 | Citation: | Wang, C., Kurtsiefer, C., Weinfurter, H., Burchard, B. (2006-01-14). Single photon emission from SiV centres in diamond produced by ion implantation. Journal of Physics B: Atomic, Molecular and Optical Physics 39 (1) : 37-41. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-4075/39/1/005 | Abstract: | We report the observation of single photon emission from single SiV (silicon-vacancy) centres in diamond produced by ion implantation. The high photostability and the narrow emission bandwidth of about 5 nm at room temperature make SiV centres interesting as a single photon source in practical quantum cryptography. We discuss problems that arise from the nonradiaditve transitions which lower the brightness of the source. © 2006 IOP Publishing Ltd. | Source Title: | Journal of Physics B: Atomic, Molecular and Optical Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/97936 | ISSN: | 09534075 | DOI: | 10.1088/0953-4075/39/1/005 |
| Appears in Collections: | Staff Publications |
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