Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2203643
Title: Self-organized nanodot formation on InP(100) by argon ion sputtering at normal incidence
Authors: Tan, S.K.
Wee, A.T.S. 
Issue Date: May-2006
Citation: Tan, S.K., Wee, A.T.S. (2006-05). Self-organized nanodot formation on InP(100) by argon ion sputtering at normal incidence. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 24 (3) : 1444-1448. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2203643
Abstract: We demonstrate the formation of hexagonal nanodot arrays with mean dot diameter and periodicity of (73±10) and 85 nm, respectively, by 1 keV Ar+ beam sputtering of InP(100) at normal incidence. The ordering of nanodots increases with sputtering duration and ion flux. Ordered hexagonal nanodot arrays form at a small temperature window near room temperature. X-ray photoelectron spectroscopy and backscattered electron composition imaging (COMPO) show that the surface of nanodots comprises primarily of elemental In due to the preferential sputtering of P. Based on scaling theory, the temporal evolution of the sputtered surface can be divided into two different regimes: coarsening in the early-time regime and ordering in the late-time regime. © 2006 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/97897
ISSN: 10711023
DOI: 10.1116/1.2203643
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