Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/97845
Title: Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure
Authors: Huang, Y.S.
Sun, W.D.
Malikova, L.
Pollak, F.H.
Ferguson, I.
Hou, H.
Feng, Z.C. 
Ryan, T.
Fantner, E.B.
Issue Date: 29-Mar-1999
Source: Huang, Y.S.,Sun, W.D.,Malikova, L.,Pollak, F.H.,Ferguson, I.,Hou, H.,Feng, Z.C.,Ryan, T.,Fantner, E.B. (1999-03-29). Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure. Applied Physics Letters 74 (13) : 1851-1853. ScholarBank@NUS Repository.
Abstract: Metallorganic chemical vapor deposited double-sided delta-doped Ga0.8Al0.2As/In0.2Ga0.8As pseudomorphic high electron mobility transistor were examined using nondestructive, room temperature photoluminescence, contactless electroreflectance and X-rays. Optical signals were evaluated from every portion of the sample to determine the In and Al compositions, channel width, two-dimensional electron gas density and the properties of the GaAs/GaAlAs superlattice buffer layer.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97845
ISSN: 00036951
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

19
checked on Feb 23, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.