Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1632873
Title: Reduction of Polysilicon Gate Depletion Effect in NMOS Devices Using Laser Thermal Processing
Authors: Chong, Y.F.
Gossmann, H.-J.L.
Pey, K.L.
Thompson, M.O.
Wee, A.T.S. 
Tung, C.H.
Issue Date: 2004
Source: Chong, Y.F., Gossmann, H.-J.L., Pey, K.L., Thompson, M.O., Wee, A.T.S., Tung, C.H. (2004). Reduction of Polysilicon Gate Depletion Effect in NMOS Devices Using Laser Thermal Processing. Electrochemical and Solid-State Letters 7 (2) : G25-G27. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1632873
Abstract: One critical issue in advanced semiconductor processing is to have adequate dopant activation in the polycrystalline silicon (poly-Si) gate to minimize carrier depletion at the gate/gate oxide interface (poly-depletion). We demonstrate a novel technique, using laser thermal processing, to form super-doped n+-poly-Si gates on ultrathin gate oxides. The results indicate that the poly-depletion effect in n-channel metal-oxide-semiconductor (NMOS) devices can be significantly reduced if the entire as-deposited amorphous silicon gate melts upon laser irradiation. Time-dependent dielectric breakdown studies show that the gate oxide reliability is not degraded even after laser processing at a high fluence. © 2003 The Electrochemical Society. All rights reserved.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97783
ISSN: 10990062
DOI: 10.1149/1.1632873
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