Please use this identifier to cite or link to this item:
|Title:||Reduction of Polysilicon Gate Depletion Effect in NMOS Devices Using Laser Thermal Processing|
|Citation:||Chong, Y.F., Gossmann, H.-J.L., Pey, K.L., Thompson, M.O., Wee, A.T.S., Tung, C.H. (2004). Reduction of Polysilicon Gate Depletion Effect in NMOS Devices Using Laser Thermal Processing. Electrochemical and Solid-State Letters 7 (2) : G25-G27. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1632873|
|Abstract:||One critical issue in advanced semiconductor processing is to have adequate dopant activation in the polycrystalline silicon (poly-Si) gate to minimize carrier depletion at the gate/gate oxide interface (poly-depletion). We demonstrate a novel technique, using laser thermal processing, to form super-doped n+-poly-Si gates on ultrathin gate oxides. The results indicate that the poly-depletion effect in n-channel metal-oxide-semiconductor (NMOS) devices can be significantly reduced if the entire as-deposited amorphous silicon gate melts upon laser irradiation. Time-dependent dielectric breakdown studies show that the gate oxide reliability is not degraded even after laser processing at a high fluence. © 2003 The Electrochemical Society. All rights reserved.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 12, 2019
WEB OF SCIENCETM
checked on Jan 2, 2019
checked on Jan 11, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.