Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.107.216602
Title: Quantum hall effect in twisted bilayer graphene
Authors: Lee, D.S.
Riedl, C.
Beringer, T.
Castro Neto, A.H. 
Von Klitzing, K.
Starke, U.
Smet, J.H.
Issue Date: 16-Nov-2011
Citation: Lee, D.S., Riedl, C., Beringer, T., Castro Neto, A.H., Von Klitzing, K., Starke, U., Smet, J.H. (2011-11-16). Quantum hall effect in twisted bilayer graphene. Physical Review Letters 107 (21) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.107.216602
Abstract: We address the quantum Hall behavior in twisted bilayer graphene transferred from the C face of SiC. The measured Hall conductivity exhibits the same plateau values as for a commensurate Bernal bilayer. This implies that the eightfold degeneracy of the zero energy mode is topologically protected despite rotational disorder as recently predicted. In addition, an anomaly appears. The densities at which these plateaus occur show a magnetic field dependent offset. It suggests the existence of a pool of localized states at low energy, which do not count towards the degeneracy of the lowest band Landau levels. These states originate from an inhomogeneous spatial variation of the interlayer coupling. © 2011 American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97683
ISSN: 00319007
DOI: 10.1103/PhysRevLett.107.216602
Appears in Collections:Staff Publications

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