Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl052478c
Title: Proton beam writing of three-dimensional nanostructures in hydrogen silsesquioxane
Authors: Van Kan, J.A. 
Bettiol, A.A. 
Watt, F. 
Issue Date: Mar-2006
Citation: Van Kan, J.A., Bettiol, A.A., Watt, F. (2006-03). Proton beam writing of three-dimensional nanostructures in hydrogen silsesquioxane. Nano Letters 6 (3) : 579-582. ScholarBank@NUS Repository. https://doi.org/10.1021/nl052478c
Abstract: Proton beam writing (p-beam writing) is a promising new direct-write lithographic technique for three-dimensional nanofabrication. In p-beam writing a megaelectronvolt proton beam is focused to a sub-100-nm spot size and scanned over a suitable resist material. Unlike electrons, when a proton beam interacts with resist it follows an almost straight path resulting in high aspect ratio structures with vertical, smooth sidewalls. The secondary electrons induced by the primary proton beam have low energy and therefore limited range, resulting in minimal proximity effects. Hydrogen silsesquioxane has been identified as a superior resist for p-beam writing, allowing the production of high-aspect-ratio structures down to 22 nm. © 2006 American Chemical Society.
Source Title: Nano Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97641
ISSN: 15306984
DOI: 10.1021/nl052478c
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