Probing the SiGe virtual substrate by high-resolution channeling contrast microscopy

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1474597

Title:	Probing the SiGe virtual substrate by high-resolution channeling contrast microscopy
Authors:	Seng, H.L. Osipowicz, T. Sum, T.C. Tok, E.S. Breton, G. Woods, N.J. Zhang, J.
Issue Date:	22-Apr-2002
Citation:	Seng, H.L., Osipowicz, T., Sum, T.C., Tok, E.S., Breton, G., Woods, N.J., Zhang, J. (2002-04-22). Probing the SiGe virtual substrate by high-resolution channeling contrast microscopy. Applied Physics Letters 80 (16) : 2940-2942. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1474597
Abstract:	Relaxed, epitaxial SiGe layers with low densities of threading dislocations are grown by linearly grading the Ge composition. However, such compositionally graded SiGe layers (virtual substrates) often result in a cross hatch surface morphology which affects subsequent device processing. Here, we report on high-resolution channeling-contrast-microscopy (CCM) measurements on such virtual substrates grown by gas-source molecular-beam epitaxy and low-pressure chemical vapor deposition. A two-MeV He+ beam focused to a submicron spot is used in these CCM measurements to obtain both lateral and depth-resolved information on the cross hatch features observed and their association with a slight lattice tilt. © 2002 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/97618
ISSN:	00036951
DOI:	10.1063/1.1474597
Appears in Collections:	Staff Publications

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