Please use this identifier to cite or link to this item:
|Title:||Probing near Dirac point electron-phonon interaction in graphene|
|Source:||Shang, J., Yan, S., Cong, C., Tan, H.-S., Yu, T., Gurzadyan, G.G. (2012). Probing near Dirac point electron-phonon interaction in graphene. Optical Materials Express 2 (12) : 1713-1722. ScholarBank@NUS Repository. https://doi.org/10.1364/OME.2.001713|
|Abstract:||Carrier dynamics in graphene films on CaF2 have been measured in the mid infrared region by femtosecond pump-probe spectroscopy. The relaxation kinetics shows two decay times. The fast time component is ~0.2 ps, which is attributed to the mixture of initial few ultrafast intraband and interband decay channels. The slow component is ~1.5 ps, which is primarily assigned to optical phonon-acoustic phonon scattering. The contribution of fast component exhibits an increase trend in the probe photon frequencies from 2600 to 3100 cm-1. At the probe frequency of 2700 cm-1, the accelerated carrier relaxation was detected, which resulted from the interband triple-resonance electron-phonon scattering in graphene. At the probe frequency of 3175 cm-1, a clear instant negative differential transmission signal was observed, which is due to stimulated two-phonon emission involved with G phonons in graphene. This result indicates that graphene can be used as a source of coherent ultrashort sound-wave emission. © 2012 Optical Society of America.|
|Source Title:||Optical Materials Express|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 22, 2018
WEB OF SCIENCETM
checked on Jan 24, 2018
checked on Feb 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.