Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/13/18/315
Title: Preparation and photoluminescence of thin films of Ge nanoparticles embedded in Al2O3 matrices
Authors: Zhu, Y. 
Ong, P.P. 
Issue Date: 7-May-2001
Source: Zhu, Y., Ong, P.P. (2001-05-07). Preparation and photoluminescence of thin films of Ge nanoparticles embedded in Al2O3 matrices. Journal of Physics Condensed Matter 13 (18) : 4075-4080. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/13/18/315
Abstract: Thin films of Ge/Al2O3 were prepared using the pulsed laser deposition method. XRD and AFM confirmed that the structure consists of Ge nanoparticles embedded in amorphous Al2O3 matrices. A blue PL from the films was found in the wavelength region of 400-550 nm with two distinct humps in the peak. The origin of the PL is attributed to localized Ge/O-related interfacial defects. Our results show evidence that the amorphous Al2O3 matrices encapsulating the Ge nanocrystals provided them with a compact and air-tight seal preventing atmospheric oxygen from diffusing into the surface of the Ge nanoparticles even when the film was annealed at a high temperature.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/97587
ISSN: 09538984
DOI: 10.1088/0953-8984/13/18/315
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