Please use this identifier to cite or link to this item: https://doi.org/10.1088/1367-2630/11/11/113038
Title: Phonon Hall effect in four-terminal nano-junctions
Authors: Zhang, L. 
Wang, J.-S. 
Li, B. 
Issue Date: 20-Nov-2009
Citation: Zhang, L., Wang, J.-S., Li, B. (2009-11-20). Phonon Hall effect in four-terminal nano-junctions. New Journal of Physics 11 : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1367-2630/11/11/113038
Abstract: Using an exact nonequilibrium Green's function formulation, the phonon Hall effect (PHE) for paramagnetic dielectrics is studied in a nanoscale four-terminal device setting. The temperature difference in the transverse direction of the heat current is calculated for two-dimensional models with the magnetic field perpendicular to the plane. We find that there is a PHE in nanoscale paramagnetic dielectrics, the magnitude of which is comparable to millimeter scale experiments. If the dynamic matrix of the system satisfies mirror reflection symmetry, the PHE disappears. The Hall temperature difference changes sign if the magnetic field is sufficiently large or if the size increases. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
Source Title: New Journal of Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/97525
ISSN: 13672630
DOI: 10.1088/1367-2630/11/11/113038
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