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|Title:||Optical nonlinearities and photo-excited carrier lifetime in CdS at 532 nm|
|Citation:||Li, H.P., Kam, C.H., Lam, Y.L., Ji, W. (2001-04-01). Optical nonlinearities and photo-excited carrier lifetime in CdS at 532 nm. Optics Communications 190 (1-6) : 351-356. ScholarBank@NUS Repository. https://doi.org/10.1016/S0030-4018(01)01066-5|
|Abstract:||Bound-electronic and free-carrier optical nonlinearities, and relaxation of photo-excited free carriers in CdS have been investigated by the use of a single-beam Z-scan technique at 532 nm. Under pulsed radiation of 35-ps duration with the input irradiances up to 4.8 GW/cm2, the two-photon absorption coefficient, the bound-electron nonlinear refractive index, the free-carrier absorption cross-section, and the change in the refractive index per unit carrier density are determined to be 5.4 ± 0.8 cm/GW, -(5.3 ± 0.8) × 10-13 cm2/W, (3.0 ± 0.5) × 10-17 cm2 and -(0.8 ± 0.1) × 10-21 cm3, respectively. By using these values in the open-aperture Z-scans conducted with 7-ns laser pulses, the carrier recombination time is extracted to be 3.6 ± 0.7 ns. The measured parameters are compared to theoretical calculations. © 2001 Published by Elsevier Science B.V.|
|Source Title:||Optics Communications|
|Appears in Collections:||Staff Publications|
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