Please use this identifier to cite or link to this item:
|Title:||On the dependence of the surface roughness of electrochemically anodized silicon on ion irradiation fluence|
|Citation:||Azimi, S., Ow, Y.S., Breese, M.B.H. (2010). On the dependence of the surface roughness of electrochemically anodized silicon on ion irradiation fluence. Electrochemical and Solid-State Letters 13 (11) : H382-H384. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3481769|
|Abstract:||We have studied the dependence of the surface roughness of electrochemically anodized p-type silicon on ion irradiation fluence. For moderate resistivity wafers, the surface roughness reduces with fluence, consistent with the dominant effect being a reduced anodization rate. However, for low resistivity wafers, the surface roughness increases with fluence. This is explained by showing how irradiation converts the low wafer resistivity, which tends to form mesoporous silicon with low associated roughness, into a moderate resistivity, which tends to form microporous silicon with high associated roughness. This result explains why the anomalous behavior of surface roughness and photoluminescence intensity is observed. © 2010 The Electrochemical Society.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 14, 2018
WEB OF SCIENCETM
checked on Jun 20, 2018
checked on Jul 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.