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Title: Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths
Authors: Wang, T.
Venkatram, N. 
Gosciniak, J.
Cui, Y.
Qian, G.
Ji, W. 
Tan, D.T.H.
Issue Date: 30-Dec-2013
Citation: Wang, T., Venkatram, N., Gosciniak, J., Cui, Y., Qian, G., Ji, W., Tan, D.T.H. (2013-12-30). Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths. Optics Express 21 (26) : 32192-32198. ScholarBank@NUS Repository.
Abstract: Silicon based nonlinear photonics has been extensively researched at telecom wavelengths in recent years. However, studies of Kerr nonlinearity in silicon at mid-infrared wavelengths still remain limited. Here, we report the wavelength dependency of third-order nonlinearity in the spectral range from 1.6 μm to 6 μm, as well as multi-photon absorption coefficients in the same range. The third-order nonlinear coefficient n2 was measured with a peak value of 1.65 × 10-13 cm2/W at a wavelength of 2.1 μm followed by the decay of nonlinear refractive index n2 up to 2.6 μm. Our latest measurements extend the wavelength towards 6 μm, which show a sharp decrement of n2 beyond 2.1 μm and steadily retains above 3 μm. In addition, the analysis of three-photon absorption and four-photon absorption processes are simultaneously performed over the wavelength range from 2.3 μm to 4.4 μm. Furthermore, the effect of multi-photon absorption on nonlinear figure of merit in silicon is discussed in detail.©2013 Optical Society of America. © 2013 Optical Society of America.
Source Title: Optics Express
ISSN: 10944087
DOI: 10.1364/OE.21.032192
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