Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.82.205331
Title: Mott scattering at the interface between a metal and a topological insulator
Authors: Zhao, E.
Zhang, C. 
Lababidi, M.
Issue Date: 30-Nov-2010
Citation: Zhao, E., Zhang, C., Lababidi, M. (2010-11-30). Mott scattering at the interface between a metal and a topological insulator. Physical Review B - Condensed Matter and Materials Physics 82 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.82.205331
Abstract: We compute the spin-active scattering matrix and the local spectrum at the interface between a metal and a three-dimensional topological band insulator. We show that there exists a critical incident angle at which complete (100%) spin-flip reflection occurs and the spin-rotation angle jumps by π. We discuss the origin of this phenomena, and systematically study the dependence of spin-flip and spin-conserving scattering amplitudes on the interface transparency and metal Fermi-surface parameters. The interface spectrum contains a well-defined Dirac cone in the tunneling limit and smoothly evolves into a continuum of metal-induced gap states for good contacts. We also investigate the complex band structure of Bi2 Se3. © 2010 The American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/97263
ISSN: 10980121
DOI: 10.1103/PhysRevB.82.205331
Appears in Collections:Staff Publications

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