Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/97214
Title: Microwave dielectric relaxation of silicon crystals
Authors: Ding, X.Z.
Lu Taijing
Ong, C.K. 
Tan, B.T.G. 
Issue Date: Nov-1994
Source: Ding, X.Z.,Lu Taijing,Ong, C.K.,Tan, B.T.G. (1994-11). Microwave dielectric relaxation of silicon crystals. Journal of Physics and Chemistry of Solids 55 (11) : 1369-1373. ScholarBank@NUS Repository.
Abstract: The dielectric properties of Si crystals are studied in the frequency range of 0.5-13.5 GHz using convenient non-destructive measurement of a material permittivity system which consists of an open-ended co-axial line and a microwave vector network analyser. It is found that there exists a dielectric relaxation at microwave frequency in Czochralski grown silicon crystals (CZ-Si). The dielectric constant of CZ-Si varies from about 70.0 to 11.7 within the frequency region studied. In contrast to CZ-Si, floating zone grown silicon shows no such relaxation phenomenon. The correlation between the impurity properties and the dielectric relaxation in silicon crystals is discussed. © 1994.
Source Title: Journal of Physics and Chemistry of Solids
URI: http://scholarbank.nus.edu.sg/handle/10635/97214
ISSN: 00223697
Appears in Collections:Staff Publications

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