Micromagnetic studies of read and write process in magnetoresistive random access memory

Abstract

A micromagnetic model is established to analyze the read and write processes in a magnetoresistance random access memories (MRAM) cell. The magnetoresistive curves of NiFeCo/ interlayer/NiFeCo cells are analyzed and compared with available experiments. The switching fields of the two magnetic layers A and B in a MRAM cell are studied versus different geometrical parameters of a cell. The word current IA w and IB w corresponding, respectively, to the switching of films A and B, and the related error of IA w and IB w under a given sense current Is, are analyzed and compared with experiment. In a cell with a given width W, proper geometrical parameters such as the thickness of the magnetic layers and the aspect ratio (length over width) are found based on the analysis of the IA w-Is and IB w-Is curves. © 2000 American Institute of Physics.