Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/97198
Title: Micromagnetic studies of read and write process in magnetoresistive random access memory
Authors: Wei, D.
Ong, C.K. 
Yang, Z.
Issue Date: 15-Mar-2000
Source: Wei, D.,Ong, C.K.,Yang, Z. (2000-03-15). Micromagnetic studies of read and write process in magnetoresistive random access memory. Journal of Applied Physics 87 (6) : 3068-3073. ScholarBank@NUS Repository.
Abstract: A micromagnetic model is established to analyze the read and write processes in a magnetoresistance random access memories (MRAM) cell. The magnetoresistive curves of NiFeCo/ interlayer/NiFeCo cells are analyzed and compared with available experiments. The switching fields of the two magnetic layers A and B in a MRAM cell are studied versus different geometrical parameters of a cell. The word current IA w and IB w corresponding, respectively, to the switching of films A and B, and the related error of IA w and IB w under a given sense current Is, are analyzed and compared with experiment. In a cell with a given width W, proper geometrical parameters such as the thickness of the magnetic layers and the aspect ratio (length over width) are found based on the analysis of the IA w-Is and IB w-Is curves. © 2000 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/97198
ISSN: 00218979
Appears in Collections:Staff Publications

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