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|Title:||Micromagnetic studies of read and write process in magnetoresistive random access memory|
|Citation:||Wei, D.,Ong, C.K.,Yang, Z. (2000-03-15). Micromagnetic studies of read and write process in magnetoresistive random access memory. Journal of Applied Physics 87 (6) : 3068-3073. ScholarBank@NUS Repository.|
|Abstract:||A micromagnetic model is established to analyze the read and write processes in a magnetoresistance random access memories (MRAM) cell. The magnetoresistive curves of NiFeCo/ interlayer/NiFeCo cells are analyzed and compared with available experiments. The switching fields of the two magnetic layers A and B in a MRAM cell are studied versus different geometrical parameters of a cell. The word current IA w and IB w corresponding, respectively, to the switching of films A and B, and the related error of IA w and IB w under a given sense current Is, are analyzed and compared with experiment. In a cell with a given width W, proper geometrical parameters such as the thickness of the magnetic layers and the aspect ratio (length over width) are found based on the analysis of the IA w-Is and IB w-Is curves. © 2000 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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