Please use this identifier to cite or link to this item:
Title: Micromagnetic studies of read and write process in magnetoresistive random access memory
Authors: Wei, D.
Ong, C.K. 
Yang, Z.
Issue Date: 15-Mar-2000
Citation: Wei, D.,Ong, C.K.,Yang, Z. (2000-03-15). Micromagnetic studies of read and write process in magnetoresistive random access memory. Journal of Applied Physics 87 (6) : 3068-3073. ScholarBank@NUS Repository.
Abstract: A micromagnetic model is established to analyze the read and write processes in a magnetoresistance random access memories (MRAM) cell. The magnetoresistive curves of NiFeCo/ interlayer/NiFeCo cells are analyzed and compared with available experiments. The switching fields of the two magnetic layers A and B in a MRAM cell are studied versus different geometrical parameters of a cell. The word current IA w and IB w corresponding, respectively, to the switching of films A and B, and the related error of IA w and IB w under a given sense current Is, are analyzed and compared with experiment. In a cell with a given width W, proper geometrical parameters such as the thickness of the magnetic layers and the aspect ratio (length over width) are found based on the analysis of the IA w-Is and IB w-Is curves. © 2000 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Sep 21, 2018

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.