Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2051792
Title: Mechanism of tantalum adhesion on SiLK™
Authors: Hu, Y.
Yang, S.-W.
Chen, X.T.
Lu, D.
Feng, Y.P. 
Wu, P.
Issue Date: 19-Sep-2005
Citation: Hu, Y., Yang, S.-W., Chen, X.T., Lu, D., Feng, Y.P., Wu, P. (2005-09-19). Mechanism of tantalum adhesion on SiLK™. Applied Physics Letters 87 (12) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2051792
Abstract: Tantalum adhesion on SiLK™ was investigated using first-principles method based on density functional theory. Phenylene groups were found to play a major role and the adjacent semi-benzene rings also contribute significantly to Ta adhesion on SiLK™. In addition, the degradation effects of H2 He reactive plasma clean on Ta adhesion on SiLK™ was investigated. Based on our findings, argon plasma treatment was suggested and implemented after reactive plasma cleaning process, which resulted in integration of SiLK™ with Cu up to seven metal layers. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97170
ISSN: 00036951
DOI: 10.1063/1.2051792
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