Please use this identifier to cite or link to this item: https://doi.org/96/27010
Title: Magnetic exchange mechanism for electronic gap opening in graphene
Authors: Rappoport, T.G.
Godoy, M.
Uchoa, B.
Dos Santos, R.R.
Castro Neto, A.H. 
Issue Date: 2011
Source: Rappoport, T.G., Godoy, M., Uchoa, B., Dos Santos, R.R., Castro Neto, A.H. (2011). Magnetic exchange mechanism for electronic gap opening in graphene. EPL 96 (2) : -. ScholarBank@NUS Repository. https://doi.org/96/27010
Abstract: We show within a local self-consistent mean-field treatment that a random distribution of magnetic adatoms can open a robust gap in the electronic spectrum of graphene. The electronic gap results from the localization of the charge carriers that arises from the interplay between the graphene sublattice structure and the exchange interaction between the adatoms. The size of the gap depends on the strength of the exchange interaction between carriers and localized spins and can be controlled by both temperature and external magnetic field. Furthermore, we show that an external magnetic field creates an imbalance of spin-up and spin-down carriers at the Fermi level, making doped graphene suitable for spin injection and other spintronic applications. © Europhysics Letters Association 2011.
Source Title: EPL
URI: http://scholarbank.nus.edu.sg/handle/10635/97122
ISSN: 02955075
DOI: 96/27010
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