Laser-induced formation of titanium silicides

Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-2

Title:	Laser-induced formation of titanium silicides
Authors:	Chen, S.Y. Shen, Z.X. Chen, Z.D. See, A.K. Chan, L.H. Zhang, T.J. Tee, K.C.
Issue Date:	1999
Citation:	Chen, S.Y.,Shen, Z.X.,Chen, Z.D.,See, A.K.,Chan, L.H.,Zhang, T.J.,Tee, K.C. (1999). Laser-induced formation of titanium silicides. Surface and Interface Analysis 28 (1) : 200-203. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-2
Abstract:	In this article, we report on the laser-induced formation of both C49 and C54 TiSi2 films with fine grains using Q-switched Nd:YAG laser irradiation from Ti/Si samples. The films formed were characterized with micro-Raman spectroscopy, high-resolution transmission electron microscopy, energy-dispersive spectrometry and atomic force microscopy. The TiSi2 films synthesized are single-phased and thin, with fine grains and a smooth film/substrate interface on the atomic scale. The process is likely to proceed via a solid-state reaction rather than liquid-phase intermixing. Our results demonstrate the unique advantages of a laser annealing technique and its potential in deep submicron semiconductor technology.
Source Title:	Surface and Interface Analysis
URI:	http://scholarbank.nus.edu.sg/handle/10635/97048
ISSN:	01422421
DOI:	10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-2
Appears in Collections:	Staff Publications

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