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|Title:||Laser-induced direct formation of C54 TiSi2 films with fine grains on c-Si substrates|
|Citation:||Chen, S.Y.,Shen, Z.X.,Chen, Z.D.,Chan, L.H.,See, A.K. (1999-09-20). Laser-induced direct formation of C54 TiSi2 films with fine grains on c-Si substrates. Applied Physics Letters 75 (12) : 1727-1729. ScholarBank@NUS Repository.|
|Abstract:||In this letter, we report on the direct synthesis of C54 TiSi2 films with fine grains by pulsed-laser irradiation from Ti deposited on Si substrates, using a Q-switched Nd:YAG laser. The films were characterized using micro-Raman spectroscopy, high-resolution transmission electron microscopy, and atomic force microscopy. In comparison with the C54 TiSi2 using the conventional rapid thermal annealing (RTA) of 35 nm thick Ti/Si, which has an average grain size of about 110 nm and film thickness of 50 nm, the laser-induced C54 TiSi2 films vary from 13 to about 42 nm in thickness with different laser scanning speed and the grain size is 85 nm on average. The TiSi2/substrate Si interface is smooth on the atomic scale. Our results demonstrate the unique advantages of the laser-induced formation technique and its potential in deep submicron semiconductor technology. We propose that the C54 phase is formed by solid-state diffusion, rather than melting. © 1999 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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