Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2711402
Title: Kinetically constraint zero- and one-dimensional heteroepitaxial island growth
Authors: Li, Z.
Singh, M.K.
Tok, E.S. 
Tan, J.P.Y.
Lin, M.
Foo, Y.-L.
Issue Date: 2007
Source: Li, Z., Singh, M.K., Tok, E.S., Tan, J.P.Y., Lin, M., Foo, Y.-L. (2007). Kinetically constraint zero- and one-dimensional heteroepitaxial island growth. Applied Physics Letters 90 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2711402
Abstract: Direct observation of the dynamics, formation, and selective growth of low dimensional epitaxial Fe13 Ge8 structures [zero-dimensional (0D) compact islands or one-dimensional (1D) wires of different aspect ratios] was conducted in real time using in situ ultra high vacuum transmission electron microscopy at 350, 430, 480, and 510 °C. Both types of island (0D/1D) share the same epitaxial relation to the underlying Ge substrate. The compact islands are formed preferentially at lower deposition temperature while wires, which are kinetically constrained, at higher temperature. The effective Ea for growth along two orthogonal azimuths of an Fe13 Ge8 island are 0.17 and 0.95 eV. The temperature dependence in morphological evolution is due to anisotropy in corner barriers and ledge diffusion on orthogonal azimuths during growth. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97022
ISSN: 00036951
DOI: 10.1063/1.2711402
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