Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/8/42/009
Title: Ionization cross sections of excitons due to scattering by excitons in semiconducting quantum well structures
Authors: Koh, T.S.
Feng, Y.P. 
Spector, H.N.
Issue Date: 14-Oct-1996
Citation: Koh, T.S., Feng, Y.P., Spector, H.N. (1996-10-14). Ionization cross sections of excitons due to scattering by excitons in semiconducting quantum well structures. Journal of Physics Condensed Matter 8 (42) : 7899-7908. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/8/42/009
Abstract: We have performed theoretical calculations on the ionization cross sections of excitons due to scattering by excitons in semiconducting quantum well structures using a finite confining potential model. It was found that the exciton-exciton ionization cross sections become important for incident energies of the excitons higher than the ionization energy. The magnitude of the ionization cross sections were found to be very much dependent on the type of scattering excitons. Quasi-3D features in the ionization cross sections are also exhibited by excitons in very narrow wells.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/97000
ISSN: 09538984
DOI: 10.1088/0953-8984/8/42/009
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