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|Title:||Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing|
|Citation:||Latt, K.M., Lee, Y.K., Osipowicz, T., Park, H.S. (2002-06-15). Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 94 (1) : 111-120. ScholarBank@NUS Repository. https://doi.org/10.1016/S0921-5107(02)00093-4|
|Abstract:||The integrity of Cu/Ta/SiO2/Si multilayer structure under nitrogen thermal annealing has been examined by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, secondary ion mass spectroscopy, Rutherford backscattering spectrometry and cross-section transmission electron microscopy analysis. According to electrical measurement it was found that Ta diffusion barrier could preserve the integrity of the Cu/Ta/SiO2/Si structure up to 650 °C in N2 for 35 min. There are two causes by which the Cu/Ta/SiO2/Si structure became degraded. One is the out diffusion Ta atoms towards the Cu film. The other factor is the formation of Cu, Ta and Cu-Ta oxide. Hence, Cu penetration is not the only reason to cause the failure; oxidation, phase transformation and interfacial reactions are also associated problems during thermal annealing. © 2002 Elsevier Science B.V. All rights reserved.|
|Source Title:||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Appears in Collections:||Staff Publications|
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