Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2010.03.116
Title: In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
Authors: Chen, Q.
Feng, Y.P. 
Chai, J.W.
Zhang, Z.
Pan, J.S.
Wang, S.J.
Keywords: Annealing
High-k
Nitrogen incorporation
SiC
Wide band-gap semiconductor
Issue Date: 1-Oct-2010
Source: Chen, Q., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. (2010-10-01). In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC. Thin Solid Films 518 (24 SUPPL.) : e31-e33. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2010.03.116
Abstract: HfO2 film was successfully grown on the 4H-SiC surface by using pulsed laser deposition system. The thermal stability and band offsets at the interfaces of HfO2/SiC and the effect of nitrogen on the electronic structures and thermal stability of HfO2 film have been investigated by using X-ray photoemission spectroscopy (XPS). Nitridation of HfO2 leads to reduction of the band gap and band offsets, but the atomic nitrogen can passivate oxygen vacancies in the dielectrics during nitridation process and improve interface thermal stability. Post nitridation annealing is required to increase the band gap and band offsets of dielectric film. © 2010 Elsevier B.V.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/96898
ISSN: 00406090
DOI: 10.1016/j.tsf.2010.03.116
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