Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.tsf.2010.03.116
| Title: | In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC | Authors: | Chen, Q. Feng, Y.P. Chai, J.W. Zhang, Z. Pan, J.S. Wang, S.J. |
Keywords: | Annealing High-k Nitrogen incorporation SiC Wide band-gap semiconductor |
Issue Date: | 1-Oct-2010 | Citation: | Chen, Q., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. (2010-10-01). In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC. Thin Solid Films 518 (24 SUPPL.) : e31-e33. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2010.03.116 | Abstract: | HfO2 film was successfully grown on the 4H-SiC surface by using pulsed laser deposition system. The thermal stability and band offsets at the interfaces of HfO2/SiC and the effect of nitrogen on the electronic structures and thermal stability of HfO2 film have been investigated by using X-ray photoemission spectroscopy (XPS). Nitridation of HfO2 leads to reduction of the band gap and band offsets, but the atomic nitrogen can passivate oxygen vacancies in the dielectrics during nitridation process and improve interface thermal stability. Post nitridation annealing is required to increase the band gap and band offsets of dielectric film. © 2010 Elsevier B.V. | Source Title: | Thin Solid Films | URI: | http://scholarbank.nus.edu.sg/handle/10635/96898 | ISSN: | 00406090 | DOI: | 10.1016/j.tsf.2010.03.116 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.