Please use this identifier to cite or link to this item: https://doi.org/10.1039/c2ra20973j
Title: Improved electrical property of Sb-doped SnO 2 nanonets as measured by contact and non-contact approaches
Authors: Liu, H.
Cheng, S.
Junpeng, L.
Minrui, Z.
Yong, L.K.
Mathews, N.
Mhaisalkar, S.G.
Hai, T.S. 
Xinhai, Z.
Haur, S.C. 
Issue Date: 21-Oct-2012
Source: Liu, H., Cheng, S., Junpeng, L., Minrui, Z., Yong, L.K., Mathews, N., Mhaisalkar, S.G., Hai, T.S., Xinhai, Z., Haur, S.C. (2012-10-21). Improved electrical property of Sb-doped SnO 2 nanonets as measured by contact and non-contact approaches. RSC Advances 2 (25) : 9590-9595. ScholarBank@NUS Repository. https://doi.org/10.1039/c2ra20973j
Abstract: This work reports the characterization of antimony doping effects on the electron transportation in SnO 2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude-Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire-nanowire junction barriers. © The Royal Society of Chemistry. 2012.
Source Title: RSC Advances
URI: http://scholarbank.nus.edu.sg/handle/10635/96880
ISSN: 20462069
DOI: 10.1039/c2ra20973j
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