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Title: Hydrogen chemisorption on Si (100) surface
Authors: Ong, C.K. 
Issue Date: Jun-1989
Source: Ong, C.K. (1989-06). Hydrogen chemisorption on Si (100) surface. Semiconductor Science and Technology 4 (6) : 469-471. ScholarBank@NUS Repository.
Abstract: We have used the complete neglect of differential overlap (CNDO) method to calculate the binding energy of atomic hydrogen of the two chemisorbed phases on Si (100) surface, namely monohydride phase and dihydride phase. A 59-atom molecular cluster is used to simulate the crystalline Si (100) surface. We found that the binding energy of hydrogen in dihydride phase is larger and the Si (100) surface will be contracted in dihydride phase.
Source Title: Semiconductor Science and Technology
ISSN: 02681242
DOI: 10.1088/0268-1242/4/6/008
Appears in Collections:Staff Publications

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