Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/4/6/008
Title: Hydrogen chemisorption on Si (100) surface
Authors: Ong, C.K. 
Issue Date: Jun-1989
Citation: Ong, C.K. (1989-06). Hydrogen chemisorption on Si (100) surface. Semiconductor Science and Technology 4 (6) : 469-471. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/4/6/008
Abstract: We have used the complete neglect of differential overlap (CNDO) method to calculate the binding energy of atomic hydrogen of the two chemisorbed phases on Si (100) surface, namely monohydride phase and dihydride phase. A 59-atom molecular cluster is used to simulate the crystalline Si (100) surface. We found that the binding energy of hydrogen in dihydride phase is larger and the Si (100) surface will be contracted in dihydride phase.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/96848
ISSN: 02681242
DOI: 10.1088/0268-1242/4/6/008
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