Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.47.16369
Title: H-induced passivation of GaAs(110)-Be surface-acceptor systems
Authors: Khoo, G.S.
Ong, C.K. 
Issue Date: 1993
Source: Khoo, G.S., Ong, C.K. (1993). H-induced passivation of GaAs(110)-Be surface-acceptor systems. Physical Review B 47 (24) : 16369-16372. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.47.16369
Abstract: Complete neglect of differential overlap cluster calculations have been performed for H+ on a clean GaAs(110) surface. The results demonstrate that H+ prefers to bond with the surface As atom rather than the surface Ga atom. Investigation of a microscopic model for hydrogen (H) -induced passivation on p-type GaAs(110) surfaces, where a surface Ga atom is replaced by a Be acceptor atom, also shows that, in equilibrium, the H atom attaches itself to the dangling bond of the As atom next to the Be atom. Passivation occurs due to compensation when the H atom captures a free hole to form H+ which then subsequently finds the As atom next to the acceptor. This microscopic model may account for the As-H stretching lines observed in infrared experiments as well as for the absence of Ga-H lines. © 1993 The American Physical Society.
Source Title: Physical Review B
URI: http://scholarbank.nus.edu.sg/handle/10635/96826
ISSN: 01631829
DOI: 10.1103/PhysRevB.47.16369
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