Please use this identifier to cite or link to this item: https://doi.org/10.1366/0003702011953469
Title: High-temperature properties of a low dielectric constant organic spin-on glass for multilevel interconnects
Authors: Wang, C.Y.
Shen, Z.X. 
Zheng, J.Z.
Keywords: FT-IR
Low dielectric material
Methyl silsesquioxane
TGA
Issue Date: Oct-2001
Source: Wang, C.Y., Shen, Z.X., Zheng, J.Z. (2001-10). High-temperature properties of a low dielectric constant organic spin-on glass for multilevel interconnects. Applied Spectroscopy 55 (10) : 1347-1351. ScholarBank@NUS Repository. https://doi.org/10.1366/0003702011953469
Abstract: In this paper, we report on the thermal properties of a low-dielectric-constant organic spin-on glass, methyl silsesquioxane (MSQ), an important material for semiconductor device fabrication. The compositional and structural changes of this MSQ material, when heated in air and N2, were investigated in detail with Fourier transform infrared (FT-IR) spectroscopy and thermogravimetric analysis (TGA). MSQ transforms to thermal oxide SiO2 above 500°C when heated in air, and it forms oxygen-deficient SiO2 above 700 °C in N2. Our results suggest that a cure temperature higher than the current 425°C is preferred to form films with better cross-linked network structure.
Source Title: Applied Spectroscopy
URI: http://scholarbank.nus.edu.sg/handle/10635/96823
ISSN: 00037028
DOI: 10.1366/0003702011953469
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