First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights

Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/44/40/405302

Title:	First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights
Authors:	Wong, T.I. Yang, M. Feng, Y.P. Chi, D.Z. Wang, S.J.
Issue Date:	2011
Citation:	Wong, T.I., Yang, M., Feng, Y.P., Chi, D.Z., Wang, S.J. (2011). First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heights. Journal of Physics D: Applied Physics 44 (40) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/44/40/405302
Abstract:	The interface energetics and the Schottky-barrier heights (SBHs) of NiSi2/HfO2 gate stacks are investigated within the framework of first-principles calculations. It was found that the SBHs are interface structure dependent and vary with abrupt interfacial bonds. Based on the calculated interface formation energies of seven interface structures for two different chemical environments and the calculated SBHs, we propose adjusting hafnium or oxygen chemical potential together with silicon rich surface as an effective method to tune the barrier heights. © 2011 IOP Publishing Ltd.
Source Title:	Journal of Physics D: Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/96653
ISSN:	00223727
DOI:	10.1088/0022-3727/44/40/405302
Appears in Collections:	Staff Publications

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