Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation

Please use this identifier to cite or link to this item: https://doi.org/10.1364/OL.34.000659

Title:	Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation
Authors:	Teo, E.J. Bettiol, A.A. Yang, P. Breese, M.B.H. Xiong, B.Q. Mashanovich, G.Z. Headley, W.R. Reed, G.T.
Issue Date:	1-Mar-2009
Citation:	Teo, E.J., Bettiol, A.A., Yang, P., Breese, M.B.H., Xiong, B.Q., Mashanovich, G.Z., Headley, W.R., Reed, G.T. (2009-03-01). Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation. Optics Letters 34 (5) : 659-661. ScholarBank@NUS Repository. https://doi.org/10.1364/OL.34.000659
Abstract:	We have successfully fabricated low-loss silicon-on-oxidized-porous-silicon (SOPS) strip waveguides with high-index contrast using focused proton-beam irradiation and electrochemical etching. Smooth surface quality with rms roughness of 3.1 nm is achieved for a fluence of 1× 1015/ cm2 after postoxidation treatment. Optical characterization at a wavelength of 1550 nm shows a loss of 1.1±0.4 dB/cm and 1.2±0.4 dB/cm in TE and TM polarization respectively, which we believe is the lowest reported loss for SOPS waveguides. This opens up new opportunities for all-silicon-based optoelectronics applications. © 2009 Optical Society of America.
Source Title:	Optics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/96597
ISSN:	01469592
DOI:	10.1364/OL.34.000659
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check