Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.112.066601
Title: Extrinsic spin hall effect induced by resonant skew scattering in Graphene
Authors: Ferreira, A. 
Rappoport, T.G.
Cazalilla, M.A.
Castro Neto, A.H. 
Issue Date: 11-Feb-2014
Citation: Ferreira, A., Rappoport, T.G., Cazalilla, M.A., Castro Neto, A.H. (2014-02-11). Extrinsic spin hall effect induced by resonant skew scattering in Graphene. Physical Review Letters 112 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.112.066601
Abstract: We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity scattering problem shows that intrinsic and Rashba spin-orbit local couplings enhance the spin Hall effect via skew scattering of charge carriers in the resonant regime. The solution of the transport equations for a random ensemble of spin-orbit impurities reveals that giant spin Hall currents are within the reach of the current state of the art in device fabrication. The spin Hall effect is robust with respect to thermal fluctuations and disorder averaging. © 2014 American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96585
ISSN: 00319007
DOI: 10.1103/PhysRevLett.112.066601
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