Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.355892
Title: Energies for atomic emissions from defect sites on the Si surfaces: The effects of halogen adsorbates
Authors: Khoo, G.S.
Ong, C.K. 
Itoh, N.
Kanasaki, J.
Issue Date: 1994
Citation: Khoo, G.S., Ong, C.K., Itoh, N., Kanasaki, J. (1994). Energies for atomic emissions from defect sites on the Si surfaces: The effects of halogen adsorbates. Journal of Applied Physics 75 (1) : 255-258. ScholarBank@NUS Repository. https://doi.org/10.1063/1.355892
Abstract: A study was made of the energies for ejection of Si atoms and SiCl molecules from defect sites on Si (100) and (110) surfaces, including adatoms, kinks, and vacancies, with and without interaction with Cl adsorbates. It is found that the energies for emitting a Si atom from defect sites are smaller than those for the perfect site and almost proportional to the coordination number for the Si (110) surface. It is also found that the interaction of Cl with defects reduces the energy for the ejection of a Si atom and a SiCl molecule, depending on the adsorption site.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96454
ISSN: 00218979
DOI: 10.1063/1.355892
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