Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1573739
Title: Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN
Authors: Al-Douri, Y. 
Issue Date: 15-Jun-2003
Citation: Al-Douri, Y. (2003-06-15). Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN. Journal of Applied Physics 93 (12) : 9730-9736. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1573739
Abstract: The empirical pseudopotential method was used to investigate the electronic and positron band structures and charge densities of GaN, AlN and their alloy in the zinc-blende structure. For the ternary alloy Ga1-xAlxN, the virtual crystal approximation was coupled with the pseudopotential method. The angular correlation of the positron annihilation radiation along with the different crystallographic directions in the crystals were also calculated.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96419
ISSN: 00218979
DOI: 10.1063/1.1573739
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