Please use this identifier to cite or link to this item:
|Title:||Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN|
|Citation:||Al-Douri, Y. (2003-06-15). Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN. Journal of Applied Physics 93 (12) : 9730-9736. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1573739|
|Abstract:||The empirical pseudopotential method was used to investigate the electronic and positron band structures and charge densities of GaN, AlN and their alloy in the zinc-blende structure. For the ternary alloy Ga1-xAlxN, the virtual crystal approximation was coupled with the pseudopotential method. The angular correlation of the positron annihilation radiation along with the different crystallographic directions in the crystals were also calculated.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 21, 2019
WEB OF SCIENCETM
checked on Mar 12, 2019
checked on Mar 15, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.