Electromigration of the conducting polymer in organic semiconductor devices and its stabilization by cross-linking

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2749178

Title:	Electromigration of the conducting polymer in organic semiconductor devices and its stabilization by cross-linking
Authors:	Png, R.-Q. Chia, P.-J. Sivaramakrishnan, S. Wong, L.-Y. Zhou, M. Chua, L.-L. Ho, P.K.-H.
Issue Date:	2007
Citation:	Png, R.-Q., Chia, P.-J., Sivaramakrishnan, S., Wong, L.-Y., Zhou, M., Chua, L.-L., Ho, P.K.-H. (2007). Electromigration of the conducting polymer in organic semiconductor devices and its stabilization by cross-linking. Applied Physics Letters 91 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2749178
Abstract:	X-ray photoelectron spectroscopy (XPS) measurement of the ratio of poly(3,4-ethylenedioxythiophene) (PEDT) to polystyrenesulfonate (PSS) reveals accumulation of PEDT+ at the interface between the PEDT:PSSH hole-injection layer and the organic semiconductor during diode operation. This ionic drift of PEDT+ occurs even at low fields of 1 V cm-1, which will have an impact on the operational stability of the characteristics of organic light-emitting diodes. XPS and Raman spectroscopy indicate that dedoping of PEDT+ does not occur significantly in hole-only devices. Cross-linking at the 1 mol % level can stabilize the conducting polymer sufficiently against electromigration. © 2007 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/96406
ISSN:	00036951
DOI:	10.1063/1.2749178
Appears in Collections:	Staff Publications

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