Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1344218
Title: Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition
Authors: Cui, J.
Rusli, R.
Yoon, S.F.
Yu, M.B.
Chew, K.
Ahn, J.
Zhang, Q.
Teo, E.J. 
Osipowicz, T. 
Watt, F. 
Issue Date: 1-Mar-2001
Citation: Cui, J., Rusli, R., Yoon, S.F., Yu, M.B., Chew, K., Ahn, J., Zhang, Q., Teo, E.J., Osipowicz, T., Watt, F. (2001-03-01). Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition. Journal of Applied Physics 89 (5) : 2699-2705. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1344218
Abstract: Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films have been deposited using an electron cyclotron resonance chemical vapor deposition system. The effects of varying the microwave power from 100 to 1000 W on the deposition rate, optical band gap, film composition, and disorder were studied using various techniques such as Rutherford backscattering spectrometry, spectrophotometry, Fourier-transform infrared absorption, and Raman scattering. Samples deposited at 100 W are found to have a carbon fraction (x) of 0.49 which is close to that of stoichiometric SiC, whereas samples deposited at higher microwave powers are carbon rich with x which are nearly independent of the microwave power. The optical gaps of the films deposited at higher microwave powers were noted to be related to the strength of the C-Hn bond in the films. The photoluminescence (PL) peak emission energy and bandwidth of these films were investigated at different excitation energies (Eex) and correlated to their optical band gaps and Urbach tail widths. Using an Eexof 3.41 eV, the PL peak energy was found to range from 2.44 to 2.79 eV, with the lowest value corresponded to an intermediate microwave power of 600 W. At increasing optical gap, the PL peak energy was found to be blueshifted, accompanied by a narrowing of the bandwidth. Similar blueshift was also observed at increasing Eex, but in this case accompanied by a broadening of the bandwidth. These results can be explained using a PL model for amorphous semiconductors based on tail-to-tail states radiative recombination. A linear relation between the full width at half maximum of the PL spectra and the Urbach energy was also observed, suggesting the broadening of the band tail states as the main factor that contributes to the shape of the PL spectra observed. © 200; American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96368
ISSN: 00218979
DOI: 10.1063/1.1344218
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

20
checked on Sep 22, 2018

WEB OF SCIENCETM
Citations

20
checked on Sep 12, 2018

Page view(s)

52
checked on Sep 7, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.