Dopant activation in subamorphized silicon upon laser annealing

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2335950

Title:	Dopant activation in subamorphized silicon upon laser annealing
Authors:	Ong, K.K. Pey, K.L. Lee, P.S. Wee, A.T.S. Wang, X.C. Chong, Y.F.
Issue Date:	2006
Citation:	Ong, K.K., Pey, K.L., Lee, P.S., Wee, A.T.S., Wang, X.C., Chong, Y.F. (2006). Dopant activation in subamorphized silicon upon laser annealing. Applied Physics Letters 89 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2335950
Abstract:	In this letter, the authors study the dopant activation and dopant distribution in a Si+ subamorphized Si (SAI-Si) when subjected to laser annealing (LA). The results show an enhanced boron activation in the SAI-Si in the nonmelt regime as compared to a crystalline Si (c-Si). The enhancement is caused by a vacancy-rich surface generated by the Si+ preimplantation that promotes the incorporation of boron atoms into the substitutional sites. On the other hand, shallow-melt LA produces a similar boron activation in both SAI-Si and c-Si samples due to a melting that consumes the entire as-implanted profile and the vacancy-rich region. © 2006 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/96263
ISSN:	00036951
DOI:	10.1063/1.2335950
Appears in Collections:	Staff Publications

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