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|Title:||Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe|
Phonon strain shift coefficient
|Citation:||Wong, L.H., Wong, C.C., Liu, J.P., Sohn, D.K., Chan, L., Hsia, L.C., Zang, H., Ni, Z.H., Shen, Z.X. (2005-11-09). Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 44 (11) : 7922-7924. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.44.7922|
|Abstract:||The use of Raman spectroscopy to characterize strain in strained Si and strained SiGe has been widely accepted. To use Raman spectroscopy for quantitative biaxial strain measurements, the strain shift coefficient for Si-Si vibration from strained Si (bSi-Si StSi) and strained SiGe (bSi-Si StSiGe) must be known. So far, b Si-Si StSi is commonly used to calculate strain in strained Si, which may result in inaccurate strain values. In this work, we report the first direct measurement of bSi-Si StSi by correlating high-resolution X-ray diffraction and Raman spectroscopy, which yields a measured value of -784 ± 4 cm-1. We also show that the strain shift coefficient of SiGe, bSi-Si StSiGe, is a strong function of Ge concentration (x), and follows the empirical relation: b = -773.9 - 897.7x for x < 0.35. © 2005 The Japan Society of Applied Physics.|
|Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Appears in Collections:||Staff Publications|
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