Please use this identifier to cite or link to this item: https://doi.org/10.1209/0295-5075/94/37006
Title: Design of a low band gap oxide ferroelectric: Bi6Ti 4O17
Authors: Xu, B. 
Singh, D.J.
Cooper, V.R.
Feng, Y.P. 
Issue Date: May-2011
Citation: Xu, B., Singh, D.J., Cooper, V.R., Feng, Y.P. (2011-05). Design of a low band gap oxide ferroelectric: Bi6Ti 4O17. EPL 94 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1209/0295-5075/94/37006
Abstract: A strategy for obtaining low band gap oxide ferroelectrics based on charge imbalance is described and illustrated by first-principles studies of the hypothetical compound Bi6Ti4O17, which is an alternate stacking of the ferroelectric Bi4Ti3O 12. We find that this compound is ferroelectric, similar to Bi 4Ti3O12 although with a reduced polarization. Importantly, calculations of the electronic structure with the recently developed functional of Tran and Blaha yield a much reduced band gap of 1.83 eV for this material compared to Bi4Ti3O12. Therefore, Bi6Ti4O17 is predicted to be a low band gap ferroelectric material. Copyright © 2011 EPLA.
Source Title: EPL
URI: http://scholarbank.nus.edu.sg/handle/10635/96178
ISSN: 02955075
DOI: 10.1209/0295-5075/94/37006
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